inchange semiconductor isc product specification isc silicon npn power transistor 2SC3150 description high breakdown voltage- : v (br)cbo = 900v(min) fast switching speed wide area of safe operation applications designed for switching regulator applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 900 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7 v i c collector current-continuous 3 a i cm collector current-peak 10 a i b b base current-continuous 1.5 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3150 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 5ma; r be = 800 v v ceo(sus) collector-emitter sustaining voltage i c = 3a; l= 500 h, i b = 1a 800 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 900 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 7 v v ce(sat) collector-emitter saturation voltage i c = 1.5a; i b = 0.3a 2.0 v v be(sat) base-emitter saturation voltage i c = 1.5a; i b = 0.3a 1.5 v i cbo collector cutoff current v cb = 800v; i e =0 10 a i ebo emitter cutoff current v eb = 5v; i c =0 10 a h fe-1 dc current gain i c = 0.2a ; v ce = 5v 10 40 h fe-2 dc current gain i c = 1a ; v ce = 5v 8 c ob output capacitance i e = 0 ; v cb = 10v; f test =1.0mhz 60 pf f t current-gain?bandwidth product i c = 0.2a ; v ce = 10v 15 mhz switching times t on turn-on time 1.0 s t stg storage time 3.0 s t f fall time i c = 2a , i b1 = 0.4a; i b2 = -0.8a r l = 200 ; v cc =400v 0.7 s ? h fe- 1 classifications k l m 10-20 15-30 20-40 isc website www.iscsemi.cn 2
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3150 isc website www.iscsemi.cn
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